The Application Prospect of Silicon Carbide Substrate

Silicon carbide substrate is a high-temperature, high-strength, high-hardness, low-thermal expansion coefficient ceramic material substrate, which is usually used to prepare high-power electronic components, high-brightness LEDs and semiconductor devices. Next, we will learn about silicon carbide substrates from the advantages, preparation process, performance and application of silicon carbide substrates.

Key Benefits of SiC Substrates

Silicon carbide substrate is a high-performance ceramic material substrate with many advantages, the following are the main advantages of silicon carbide substrate.

1. High-temperature performance

SiC substrates have good high-temperature stability and can maintain good performance in high-temperature environments, so they are a preferred material for manufacturing high-temperature equipment and devices.

2. High hardness

The hardness of the silicon carbide substrate is very high, higher than most metal and ceramic materials, which makes the silicon carbide substrate have good wear resistance and corrosion resistance under severe working conditions such as high load, high pressure, and high friction sex.

3. Low thermal expansion coefficient

The thermal expansion coefficient of the silicon carbide substrate is relatively low, which means that the silicon carbide substrate will maintain its size and shape stability under high temperature conditions, thereby reducing thermal stress caused by temperature changes and improving component reliability and stability .

4. High thermal conductivity

The silicon carbide substrate has high thermal conductivity and can quickly transfer heat to the radiator, thereby effectively reducing the operating temperature of components and improving the reliability and life of components.

5. Good chemical stability

The silicon carbide substrate has good chemical stability and will not be corroded by common acids and alkalis, so it can be used in harsh environments to ensure long-term stability and reliability of components.

6. Good machinability

SiC substrates can be processed by a variety of processing methods, such as cutting, grinding, drilling, polishing, etc., to make complex shapes and high-precision components and parts.

Preparation Process of Silicon Carbide Substrate

In the process of preparing silicon carbide substrates, parameters such as heat treatment temperature and atmosphere need to be strictly controlled to ensure the quality and performance of silicon carbide substrates. At the same time, it is also necessary to select the appropriate forming and post-processing methods to obtain the desired shape, surface quality and dimensional accuracy. The following is the fabrication process of silicon carbide substrate:

1. Precursor preparation: select high-purity silicon powder and graphite powder, mix them according to a certain ratio, then put the mixture into a high-temperature furnace, and perform a pyrolysis reaction under atmosphere control to obtain a silicon carbide precursor.

2. Precursor molding: The silicon carbide precursor is molded. The commonly used molding methods include compression molding, grouting molding, extrusion molding, 3D printing, etc.

3. Heat treatment of the precursor: put the formed silicon carbide precursor into a high-temperature furnace, and perform high-temperature heat treatment under atmosphere control to convert the organic substances and amorphous carbides in the precursor into silicon carbide.

4. Post-processing of silicon carbide substrates: Polishing, etching, electrolysis and other treatments are performed on the surface of silicon carbide substrates to obtain the desired surface quality and shape.

Properties of SiC Substrates

Silicon carbide substrates have many excellent properties, mainly including the following aspects:

1. High-temperature performance: SiC substrates can maintain stable performance at high temperatures, and their operating temperatures can reach above 2000°C.

2. High hardness and strength: The silicon carbide substrate has high hardness and strength, and has good wear resistance and compression resistance.

3. Low expansion coefficient: The silicon carbide substrate has a small thermal expansion coefficient and can maintain shape stability at high temperatures.

4. High thermal conductivity: The silicon carbide substrate has good thermal conductivity, which can effectively dissipate heat, reduce the temperature rise of components, and improve the stability and life of the device.

5. Good chemical stability: The silicon carbide substrate is not easy to be corroded, and has good stability to chemical substances such as acids and alkalis.

Application of Silicon Carbide Substrate

Silicon carbide substrates are widely used in power electronics, semiconductors, optoelectronics, solar cells and other fields. Here are some common applications:

1. Manufacturing of semiconductor devices: SiC substrates are widely used in semiconductor devices, such as power MOSFETs, IGBTs, diodes, etc.

2. LED lighting: SiC substrates can be used to manufacture high-brightness, high-efficiency LED lighting devices to improve the luminous efficiency and lifespan of LEDs.

3. Solar cells: Silicon carbide substrates can be used in the manufacture of solar cells to improve the efficiency and life of solar cells.

4. Thermal management: SiC substrates have good heat dissipation properties and can be used to manufacture heat sinks for high-power electronic devices.

5. Sensors in high-temperature environments: SiC substrates can be used to manufacture sensors in high-temperature environments, such as oxygen sensors with yttrium oxide electrolytes.

Conclusion

In short, the excellent performance and wide application prospects of silicon carbide substrates make it more and more important in the high-tech field.